IRFR220PBF
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.8Ohm; ID 4.8A; TO-252AA; PD 42W; VGS +/-20V

From Vishay PCS

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions6.73 x 6.22 x 2.38 mm
Forward Diode Voltage1.8 V
Forward Transconductance1.7 S
Height2.38 mm
Length6.73 mm
Maximum Continuous Drain Current4.8 A
Maximum Drain Source Resistance0.8 Ω
Maximum Drain Source Voltage200 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation42 W
Minimum Operating Temperature-55 °C
Mounting TypeSurface Mount
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeDPAK
Pin Count3
Typical Gate Charge @ VgsMaximum of 14 nC @ 10 V
Typical Input Capacitance @ Vds260 pF @ 25 V
Typical Turn On Delay Time7.2 ns
Typical TurnOff Delay Time19 ns
Width6.22 mm

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