IRFR220PBF MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.8Ohm; ID 4.8A; TO-252AA; PD 42W; VGS +/-20V
From Vishay PCS
Category | Power MOSFET |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Dimensions | 6.73 x 6.22 x 2.38 mm |
Forward Diode Voltage | 1.8 V |
Forward Transconductance | 1.7 S |
Height | 2.38 mm |
Length | 6.73 mm |
Maximum Continuous Drain Current | 4.8 A |
Maximum Drain Source Resistance | 0.8 Ω |
Maximum Drain Source Voltage | 200 V |
Maximum Gate Source Voltage | ±20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 42 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Operating Temperature Range | -55 to +150 °C |
Package Type | DPAK |
Pin Count | 3 |
Typical Gate Charge @ Vgs | Maximum of 14 nC @ 10 V |
Typical Input Capacitance @ Vds | 260 pF @ 25 V |
Typical Turn On Delay Time | 7.2 ns |
Typical TurnOff Delay Time | 19 ns |
Width | 6.22 mm |