IRFU9120PBF
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.6Ohm; ID -5.6A; TO-251AA; PD 2.5W; VGS +/-20

From Vishay PCS

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Dimensions6.73 x 2.39 x 6.22 mm
Forward Diode Voltage-6.3 V
Forward Transconductance1.5 S
Height6.22 mm
Length6.73 mm
Maximum Continuous Drain Current-5.6 A
Maximum Drain Source Resistance0.6 Ω
Maximum Drain Source Voltage-100 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation2.5 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeTO-251AA
Pin Count3
Typical Gate Charge @ VgsMaximum of 18 nC @ -10 V
Typical Input Capacitance @ Vds390 pF @ -25 V
Typical Turn On Delay Time9.6 ns
Typical TurnOff Delay Time21 ns
Width2.39 mm

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