IRLL110PBF
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ohm; ID 1.5A; SOT-223; PD 3.1W; VGS +/-10V

From Vishay PCS

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions6.7 x 3.7 x 1.8 mm
Forward Diode Voltage2.5 V
Forward Transconductance0.57 S
Height1.8 mm
Length6.7 mm
Maximum Continuous Drain Current1.5 A
Maximum Drain Source Resistance0.76 Ω
Maximum Drain Source Voltage100 V
Maximum Gate Source Voltage±10 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation3.1 W
Minimum Operating Temperature-55 °C
Mounting TypeSurface Mount
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeSOT-223
Pin Count3
Typical Gate Charge @ VgsMaximum of 6.1 nC @ 5 V
Typical Input Capacitance @ Vds250 pF @ 25 V
Typical Turn On Delay Time9.3 ns
Typical TurnOff Delay Time16 ns
Width3.7 mm

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