IRLL110PBF MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ohm; ID 1.5A; SOT-223; PD 3.1W; VGS +/-10V
From Vishay PCS
Category | Power MOSFET |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Dimensions | 6.7 x 3.7 x 1.8 mm |
Forward Diode Voltage | 2.5 V |
Forward Transconductance | 0.57 S |
Height | 1.8 mm |
Length | 6.7 mm |
Maximum Continuous Drain Current | 1.5 A |
Maximum Drain Source Resistance | 0.76 Ω |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Source Voltage | ±10 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 3.1 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Operating Temperature Range | -55 to +150 °C |
Package Type | SOT-223 |
Pin Count | 3 |
Typical Gate Charge @ Vgs | Maximum of 6.1 nC @ 5 V |
Typical Input Capacitance @ Vds | 250 pF @ 25 V |
Typical Turn On Delay Time | 9.3 ns |
Typical TurnOff Delay Time | 16 ns |
Width | 3.7 mm |