2N7011
N-Channel Enhancement MOSFET

From Silicon Systems, Inc.

@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)2.0
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)10
Absolute Max. Power Diss. (W)1.2
C(iss) Max. (F)300p
I(D) Abs. Drain Current (A)1.3
I(DSS) Max. (A)1.0m
I(DSS) Min. (A)250u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-237var
Thermal Resistance Junc-Amb.125
V(BR)DSS (V)40
V(BR)GSS (V)40
V(GS)th Max. (V)1.4
V(GS)th Min. (V)1.0
g(fs) Min. (S) Trans. conduct.1.2m
r(DS)on Max. (Ohms)350m
t(d)off Max. (s) Off time30n
t(f) Max. (s) Fall time.25n
t(r) Max. (s) Rise time30n
td(on) Max (s) On time delay20n

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