{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.4V @ 1mA","Other Drawings":"ZVN4206GV_footprnt","Package \/ Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"710mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-223","PCN Design\/Specification":"Date Code Mark Update 13\/Jan\/2015 Date Code Revision 01 13\/Jan\/2015","Rds On (Max) @ Id, Vgs":"2 Ohm @ 1A, 10V","Datasheets":"ZVN2106G","FET Type":"MOSFET N-Channel, Metal Oxide","St...

{"Polarity":"N","Continuous Drain Current":"0.71(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-223","Drain-Source On-Res":"2(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3 +Tab","Channel Mode":"Enhancemen...