{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Other Drawings":"SOT-23 Top","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"1.2A (Ta)","Gate Charge (Qg) @ Vgs":"3.2nC @ 10V","Product Photos":"SOT23","Rds On (Max) @ Id, Vgs":"250 mOhm @ 1.8A, 10V","Datasheets":"ZXMN6A07F","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"60V","RoHS Information"...

{"Polarity":"N","Continuous Drain Current":"1.2(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Small Signal","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-23","Drain-Source On-Res":"0.45(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3","Channel Mode":"Enhancement","...