{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Other Drawings":"SOT-23-6 Pin Out","Package \/ Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"3.8A (Ta)","Gate Charge (Qg) @ Vgs":"5.8nC @ 10V","Product Photos":"SOT-223","PCN Design\/Specification":"Date Code Mark Update 13\/Jan\/2015 Date Code Revision 01 13\/Jan\/2015","Rds On (Max) @ Id, Vgs":"80 mOhm @ 4.8A, 10V","Datasheets":"ZXMN6A08G","FET Type":"MOSFET N-...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3.8(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"3.9(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.08(ohm)","Number of Elements":"1"}...