IXTB62N50L
62 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET

From Zilog

StatusACTIVE
Avalanche Energy Rating (Eas)5000 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)62 A
Drain-source On Resistance-Max0.1000 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionPLASTIC, PLUS264, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Pulsed Drain Current-Max (IDM)150 A
Terminal FinishTIN SILVER COPPER
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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