IXTY01N100D
0.1 A, 1000 V, 110 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

From Zilog

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min1000 V
Drain Current-Max (ID)0.1000 A
Drain-source On Resistance-Max110 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionTO-252AA, 3 PIN
Number of Elements1
Number of Terminals2
Operating ModeDEPLETION
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max1.1 W
Pulsed Drain Current-Max (IDM)0.4000 A
Surface MountYes
Terminal FinishPURE TIN
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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