Centralsemi.com/2N2857
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40mA","Online Catalog":"NPN RF Transistors","Noise Figure (dB Typ @ f)":"4.5dB @ 450MHz","Transistor Type":"NPN","Family":"RF Transistors (BJT)","Product Photos":"TO-72 Series","Frequency - Transition":"1.9GHz","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"TO-72","Packaging":"Bulk","Datasheets":"2N2857,2N3839","Power - Max":"200mW","RoHS Information":"RoHS ...
1735 Bytes - 15:58:18, 29 April 2024
Centralsemi.com/2N2857LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.2000 W","Collector Current-Max (IC)":"0.0400 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"15 V","Terminal Position":"BOTTOM","Transistor Application":"AMPLIFIER","Collector-base C...
1456 Bytes - 15:58:18, 29 April 2024
Dla.mil/2N2857+JAN
{"Absolute Max. Power Diss. (W)":"200m","Noise Figure Max. (dB)":"4.5","V(BR)CBO (V)":"30","h(FE) Min. Static Current Gain":"30","I(C) Abs.(A) Collector Current":"40m","h(FE) Max. Current gain.":"150","@Freq. (Hz) (Test Condition)":"140k","I(CBO) Max. (A)":"10n","@V(CBO) (V) (Test Condition)":"15","Package":"TO-72","@V(CE) (V) (Test Condition)":"6.0","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"15","Military":"Y","Mil Number":"JAN2N2857","@I(C) (A) (Test Condition)":"1.5m","Power Gain Min. (dB)":...
1108 Bytes - 15:58:18, 29 April 2024
Dla.mil/2N2857+JANS
{"Absolute Max. Power Diss. (W)":"200m","Noise Figure Max. (dB)":"4.5","V(BR)CBO (V)":"30","h(FE) Min. Static Current Gain":"30","I(C) Abs.(A) Collector Current":"40m","h(FE) Max. Current gain.":"150","@Freq. (Hz) (Test Condition)":"140k","I(CBO) Max. (A)":"10n","@V(CBO) (V) (Test Condition)":"15","Package":"TO-72","@V(CE) (V) (Test Condition)":"6.0","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"15","Military":"Y","Mil Number":"JANS2N2857","@I(C) (A) (Test Condition)":"1.5m","Power Gain Min. (dB)"...
1114 Bytes - 15:58:18, 29 April 2024
Dla.mil/2N2857+JANTX
{"Absolute Max. Power Diss. (W)":"200m","Noise Figure Max. (dB)":"4.5","V(BR)CBO (V)":"30","h(FE) Min. Static Current Gain":"30","I(C) Abs.(A) Collector Current":"40m","h(FE) Max. Current gain.":"150","@Freq. (Hz) (Test Condition)":"140k","I(CBO) Max. (A)":"10n","@V(CBO) (V) (Test Condition)":"15","Package":"TO-72","@V(CE) (V) (Test Condition)":"6.0","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"15","Military":"Y","Mil Number":"JANTX2N2857","@I(C) (A) (Test Condition)":"1.5m","Power Gain Min. (dB)...
1120 Bytes - 15:58:18, 29 April 2024
Dla.mil/2N2857+JANTXV
{"Absolute Max. Power Diss. (W)":"200m","Noise Figure Max. (dB)":"4.5","V(BR)CBO (V)":"30","h(FE) Min. Static Current Gain":"30","I(C) Abs.(A) Collector Current":"40m","h(FE) Max. Current gain.":"150","@Freq. (Hz) (Test Condition)":"140k","I(CBO) Max. (A)":"10n","@V(CBO) (V) (Test Condition)":"15","Package":"TO-72","@V(CE) (V) (Test Condition)":"6.0","f(T) Min. (Hz) Transition Freq":"200M","V(BR)CEO (V)":"15","Military":"Y","Mil Number":"JANTXV2N2857","@I(C) (A) (Test Condition)":"1.5m","Power Gain Min. (dB...
1124 Bytes - 15:58:18, 29 April 2024
Fairchildsemi.com/2N2857
{"Category":"Discrete Semiconductor Products","Series":"*","Other Names":"2N2857MT FC2N2857 FC2N2857-ND","Family":"RF Transistors (BJT)","Standard Package":"25"}...
903 Bytes - 15:58:18, 29 April 2024
Microchip.com/2N2857
1004 Bytes - 15:58:18, 29 April 2024
Microchip.com/2N2857UB
976 Bytes - 15:58:18, 29 April 2024
Microsemi.com/2N2857
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40mA","Noise Figure (dB Typ @ f)":"4.5dB @ 450MHz","Transistor Type":"NPN","Frequency - Transition":"500MHz","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"TO-72","Packaging":"Bulk","Datasheets":"2N2857","Power - Max":"200mW","Gain":"12.5dB ~ 21dB @ 450MHz","Package \/ Case":"TO-206AF, TO-72-4 Metal Can","Mounting Type":"Through H...
1399 Bytes - 15:58:18, 29 April 2024
Microsemi.com/2N2857E3
{"Status":"ACTIVE","Transistor Type":"RF SMALL SIGNAL"}...
713 Bytes - 15:58:18, 29 April 2024
Microsemi.com/2N2857JANTX
{"Collector Current (DC) ":"0.04 A","Transistor Polarity":"NPN","Collector-Emitter Voltage":"15 V","Rad Hardened":"No","Mounting":"Through Hole","Emitter-Base Voltage":"3 V","Category ":"Bipolar RF","Operating Temperature Classification":"Military","Power Dissipation":"0.2 W","Operating Temp Range":"-65C to 200C","Frequency":"1600 MHz","Package Type":"TO-72","Collector-Base Voltage":"30 V","DC Current Gain":"30","Pin Count":"4","Number of Elements":"1"}...
1461 Bytes - 15:58:18, 29 April 2024
Microsemi.com/2N2857UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40mA","Noise Figure (dB Typ @ f)":"4.5dB @ 450MHz","Transistor Type":"NPN","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N2857UB","Power - Max":"200mW","Gain":"21dB","Package \/ Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 3mA, 1V","Ot...
1353 Bytes - 15:58:18, 29 April 2024
Microsemi.com/2N2857UBE3
{"Status":"ACTIVE","Transistor Type":"RF SMALL SIGNAL"}...
722 Bytes - 15:58:18, 29 April 2024
Microsemi.com/JAN2N2857
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40mA","Noise Figure (dB Typ @ f)":"4.5dB @ 450MHz","Transistor Type":"NPN","Frequency - Transition":"500MHz","Family":"RF Transistors (BJT)","Series":"Military, MIL-PRF-19500\/343","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"TO-72","Packaging":"Bulk","Datasheets":"2N2857","Power - Max":"200mW","Gain":"12.5dB ~ 21dB @ 450MHz","Package \/ Case":"TO-72-3 Metal Can","Mounti...
1443 Bytes - 15:58:18, 29 April 2024
Microsemi.com/JAN2N2857UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40mA","Noise Figure (dB Typ @ f)":"4.5dB @ 450MHz","Transistor Type":"NPN","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N2857UB","Power - Max":"200mW","Gain":"21dB","Package \/ Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 3mA, 1V","Ot...
1371 Bytes - 15:58:18, 29 April 2024
Microsemi.com/JANJ2N2857
{"Status":"ACTIVE","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Number of Terminals":"3","Collector-emitter Voltage-Max":"15 V","Transistor Element Material":"SILICON","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0400 A","Terminal Position":"BOTTOM","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"CYLINDRICAL","Number of Elements":"1"}...
1162 Bytes - 15:58:18, 29 April 2024
Microsemi.com/JANJ2N2857UB
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERSOT-3","Terminal Form":"NO LEAD","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Element Material":"SILICON","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL"...
1261 Bytes - 15:58:18, 29 April 2024
Microsemi.com/JANS2N2857
{"Status":"DISCONTINUED","Collector-base Capacitance-Max":"1 pF","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-4","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"15 V","Transistor Element Material":"SILICON","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0400 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Pac...
1339 Bytes - 15:58:18, 29 April 2024
Microsemi.com/JANS2N2857UB
{"Status":"DISCONTINUED","Collector-base Capacitance-Max":"1 pF","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Element Material":"SILICON","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","...
1406 Bytes - 15:58:18, 29 April 2024
Microsemi.com/JANTX2N2857
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40mA","Frequency - Transition":"500MHz","Noise Figure (dB Typ @ f)":"4.5dB @ 450MHz","Transistor Type":"NPN","Product Photos":"JANTX2N2857","Family":"RF Transistors (BJT)","Series":"Military, MIL-PRF-19500\/343","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"TO-72","Packaging":"Bulk","Datasheets":"2N2857","Power - Max":"200mW","Gain":"12.5dB ~ 21dB @ 450MHz","Package \/ Case...
1639 Bytes - 15:58:18, 29 April 2024
Microsemi.com/JANTX2N2857UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40mA","Noise Figure (dB Typ @ f)":"4.5dB @ 450MHz","Transistor Type":"NPN","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N2857UB","Power - Max":"200mW","Gain":"21dB","Package \/ Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 3mA, 1V","Ot...
1383 Bytes - 15:58:18, 29 April 2024
Microsemi.com/JANTXV2N2857
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40mA","Noise Figure (dB Typ @ f)":"4.5dB @ 450MHz","Transistor Type":"NPN","Frequency - Transition":"500MHz","Family":"RF Transistors (BJT)","Series":"Military, MIL-PRF-19500\/343","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"TO-72","Packaging":"Bulk","Datasheets":"2N2857","Power - Max":"200mW","Gain":"12.5dB ~ 21dB @ 450MHz","Package \/ Case":"TO-72-3 Metal Can","Mounti...
1461 Bytes - 15:58:18, 29 April 2024
Microsemi.com/JANTXV2N2857UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"40mA","Noise Figure (dB Typ @ f)":"4.5dB @ 450MHz","Transistor Type":"NPN","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"15V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N2857UB","Power - Max":"200mW","Gain":"21dB","Package \/ Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 3mA, 1V","Ot...
1389 Bytes - 15:58:18, 29 April 2024
N_a/2N2857
{"Category":"NPN Transistor, Transistor","Amps":"0.04A","MHz":">1GHZ","Volts":"30V"}...
516 Bytes - 15:58:18, 29 April 2024
Nxp.com/2N2857
{"Status":"ACTIVE","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Number of Terminals":"4","Collector-emitter Voltage-Max":"15 V","Transistor Element Material":"SILICON","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0400 A","Transition Frequency-Nom (fT)":"1000 MHz","Terminal Position":"BOTTOM","Transistor Type":"RF SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Package Style":"CYLINDRICAL","Number of Elements":"1"}...
1151 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857
{"Status":"ACTIVE","Collector-base Capacitance-Max":"1 pF","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"METAL, TO-72, 4 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"1000 MHz","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.0400 A","Transistor Element Material":"...
1379 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857.02SML
{"Terminal Finish":"NOT SPECIFIED","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.2000 W","Collector Current-Max (IC)":"0.0400 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"15 V","Terminal Position":"BOTTOM","Transistor Application":"AMPLIFIER","Collector-base Cap...
1456 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL...
1371 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1364 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.CVB
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1388 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.CVP
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1391 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.DA
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1383 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.GBDM
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1395 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.GCDE
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1396 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.GCDM
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1397 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.GRPB
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1394 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.GRPC
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1393 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.RAD
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1390 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.SEM
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1391 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.SS
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1384 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1A-JQRS.XRAY
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1397 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL...
1371 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1B-JQRS
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1367 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1B-JQRS.CVB
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1388 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1B-JQRS.CVP
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1389 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1B-JQRS.DA
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1383 Bytes - 15:58:18, 29 April 2024
Semelab.co.uk/2N2857C1B-JQRS.GBDM
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.0400 A","Collector-emitter Voltage-Max":"15 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Pac...
1397 Bytes - 15:58:18, 29 April 2024