Fairchildsemi.com/2N7000-D26Z
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Mccsemi.com/2N7000-BP
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.8300 W","Package Shape":"ROUND","Status":"ACTIVE-UNCONFIRMED","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE ...
1508 Bytes - 17:06:39, 07 May 2024
Microchip.com/2N7000-G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 1mA","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"2N7000","Rds On (Max) @ Id, Vgs":"5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"1W","Standard Package":"1,000...
1757 Bytes - 17:06:39, 07 May 2024
Microchip.com/2N7000-G P002
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Brand":"Microchip Technology","Id - Continuous Drain Current":"200 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"5.3 Ohms","Package \/ Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...
1297 Bytes - 17:06:39, 07 May 2024
Microchip_technology_inc_/2N7000-G
858 Bytes - 17:06:39, 07 May 2024
Onsemi.com/2N7000-D26Z
842 Bytes - 17:06:39, 07 May 2024
Onsemi.com/2N7000-D74Z
847 Bytes - 17:06:39, 07 May 2024
Onsemi.com/2N7000-D75Z
846 Bytes - 17:06:39, 07 May 2024
Supertex.com/2N7000-G
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Trans...
1445 Bytes - 17:06:39, 07 May 2024
Unisonic.com.tw/2N7000-T92-B
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.4000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Ap...
1494 Bytes - 17:06:39, 07 May 2024
Unisonic.com.tw/2N7000-T92-K
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.4000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Ap...
1492 Bytes - 17:06:39, 07 May 2024
Unisonic.com.tw/2N7000-T92-R
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.4000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Ap...
1492 Bytes - 17:06:39, 07 May 2024
Vishay.com/2N7000-TA
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"PLASTIC, TO-92, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8300 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"0.3000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Packa...
1418 Bytes - 17:06:39, 07 May 2024
Vishay.com/2N7000-TR1
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"PLASTIC, TO-92, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8300 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"0.3000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Packa...
1424 Bytes - 17:06:39, 07 May 2024