{"@V(DS) (V) (Test Condition)":"2.0","C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"400m","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"500u","@(VDS) (V) (Test Condition)":"40","V(BR)DSS (V)":"60","g(fs) Min. (S) Trans. conduct.":"80u","V(BR)GSS (V)":"40","@I(D) (A) (Test Condition)":"200m","I(D) Abs. Drain Current (A)":"150m","Package":"TO-226AA","Military":"N","r(DS)on Max. (Ohms)":"7.5"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"2N7008","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"1W","Standard Package":"1,...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Brand":"Microchip Technology","Id - Continuous Drain Current":"230 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"7.5 Ohms","Package \/ Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Brand":"Microchip Technology","Id - Continuous Drain Current":"230 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"7.5 Ohms","Package \/ Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Brand":"Microchip Technology","Id - Continuous Drain Current":"230 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"7.5 Ohms","Package \/ Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Brand":"Microchip Technology","Id - Continuous Drain Current":"230 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"7.5 Ohms","Package \/ Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Brand":"Microchip Technology","Id - Continuous Drain Current":"230 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"7.5 Ohms","Package \/ Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","FET Feature":"Standard","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-92-3","Other Names":"2N7008OS","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N7008 Datasheet","Power - Max":"400mW","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Mounting Type":"T...

{"Terminal Finish":"MATTE TIN","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2300 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor ...