{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Online Catalog":"NPN Transistors","Transistor Type":"NPN","Frequency - Transition":"400MHz","Product Photos":"TO-206AA TO-18-3","Vce Saturation (Max) @ Ib, Ic":"-","Current - Collector Cutoff (Max)":"25\u00b5A (ICBO)","Series":"-","Standard Package":"2,000","Supplier Device Package":"TO-18","Voltage - Collector Emitter Breakdown (Max)":"15V","Packaging":"Bulk","Datasheets":"Snall Signal Transitors TO-18 Case","Power - Max":"...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"40 ns","Turn-off Time-Max (toff)":"70 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"400 MHz","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","DC Current Gain-Min (hFE)":"30","Terminal Position":"BOTTOM","Transistor ...

{"V(CE)sat Max.(V)":"0.4","Absolute Max. Power Diss. (W)":"360m","V(BR)CBO (V)":"40","h(FE) Min. Static Current Gain":"30","h(FE) Max. Current gain.":"120","@Freq. (Hz) (Test Condition)":"100M","@V(CE) (V) (Test Condition)":"10","I(CBO) Max. (A)":"25n","@V(CBO) (V) (Test Condition)":"20","Package":"TO-18","h(fe) Min. SS Current gain.":"3.0","@I(B) (A) (Test Condition)":"1.0m","V(BR)CEO (V)":"15","Military":"Y","Mil Number":"JAN2N708","@I(C) (A) (Test Condition)":"10m","C(obo) (Max) (F)":"6.0p"}...

{"V(CE)sat Max.(V)":"0.4","Absolute Max. Power Diss. (W)":"360m","V(BR)CBO (V)":"40","h(FE) Min. Static Current Gain":"30","h(FE) Max. Current gain.":"120","@Freq. (Hz) (Test Condition)":"100M","@V(CE) (V) (Test Condition)":"10","I(CBO) Max. (A)":"25n","@V(CBO) (V) (Test Condition)":"20","Package":"TO-18","h(fe) Min. SS Current gain.":"3.0","@I(B) (A) (Test Condition)":"1.0m","V(BR)CEO (V)":"15","Military":"Y","Mil Number":"JANTX2N708","@I(C) (A) (Test Condition)":"10m","C(obo) (Max) (F)":"6.0p"}...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"40","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-18, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"40 ns","Turn-off Time-Max (toff)":"75 ns","Collector-emitter Voltage-Max":"15 V","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUN...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"400mV @ 1mA, 10mA","Series":"Military, MIL-PRF-19500\/312","Package \/ Case":"TO-206AA, TO-18-3 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"15V","Power - Max":"360mW","Packaging":"Bulk","Datasheets":"2N708","Current - Collector Cutoff (Max)":"25nA (ICBO)","Supplier Device Package":"TO-18 (T...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"-","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"400mV @ 1mA, 10mA","Series":"Military, MIL-PRF-19500\/312","Package \/ Case":"TO-206AA, TO-18-3 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"15V","Power - Max":"360mW","Packaging":"Bulk","Datasheets":"2N708","Current - Collector Cutoff (Max)":"25nA (ICBO)","Supplier Device Package":"TO-18 (T...

{"Category":"NPN Transistor, Transistor","Amps":"0.2A","MHz":"<1 MHz","Volts":"40V"}...

{"Category":"NPN Transistor, Transistor","Amps":"0.2A","MHz":"<1 MHz","Volts":"50V"}...

{"V(CE)sat Max.(V)":"0.4","Absolute Max. Power Diss. (W)":"360m","t(on) Max. (s) Turn-On Time":"40n","V(BR)CBO (V)":"40","h(FE) Min. Static Current Gain":"40","Status":"Discontinued","h(FE) Max. Current gain.":"120","t(off) Max. (s) Turn-Off Time":"75n","@V(CE) (V) (Test Condition)":"1.0","Package":"TO-18","@I(B) (A) (Test Condition)":"1.0m","h(fe) Min. SS Current gain.":"30","f(T) Min. (Hz) Transition Freq":"300M","V(BR)CEO (V)":"15","Military":"N","@I(C) (A) (Test Condition)":"10m","C(obo) (Max) (F)":"6.0...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, ISOLATED TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"48 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Case Connection":"ISOLATED","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN\/PEG","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakd...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"80 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"80 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"80 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configura...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"80 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configura...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"56 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"56 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"56 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configura...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"56 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"56 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configura...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"56 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configura...

{"Status":"Discontinued","I(CBO) Max. (A)":"25n","Absolute Max. Power Diss. (W)":"360m","Package":"TO-51","C(obo) (Max) (F)":"6.0p","f(T) Min. (Hz) Transition Freq":"480M","V(BR)CEO (V)":"15","V(BR)CBO (V)":"40","Military":"N"}...

{"Status":"Discontinued","@I(C) (A) (Test Condition)":"10m","I(CBO) Max. (A)":"25n","Absolute Max. Power Diss. (W)":"100m","Package":"Micro-T","@V(CE) (V) (Test Condition)":"1.0","f(T) Min. (Hz) Transition Freq":"480M","V(BR)CEO (V)":"15","h(FE) Min. Static Current Gain":"30","V(BR)CBO (V)":"40","Military":"N","C(obo) (Max) (F)":"6.0p"}...

{"Absolute Max. Power Diss. (W)":"100","I(D) Abs. Max.(A) Drain Curr.":"6.1","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"80n","r(DS)on Max. (Ohms)":"500m","@V(DS) (V) (Test Condition)":"15","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.1","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-254AA","I(DSS) Min. (A)":"25u","Military":"N","td(on) Max (s) On time delay":"25n","I(DSS) Max. (A)":"250u","t(r) Max. ...

{"C(iss) Max. (F)":"30p","Absolute Max. Power Diss. (W)":"50","I(D) Abs. Max.(A) Drain Curr.":"8.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"60n","r(DS)on Max. (Ohms)":"150m","@V(DS) (V) (Test Condition)":"50","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.0","@Freq. (Hz) (Test Condition)":"13M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-257AB","I(DSS) Min. (A)":"25m","Military":"N","td(on) Max (...

{"C(iss) Max. (F)":"39p","Absolute Max. Power Diss. (W)":"50","I(D) Abs. Max.(A) Drain Curr.":"5.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"60n","r(DS)on Max. (Ohms)":"30m","@V(DS) (V) (Test Condition)":"100","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"5.5","@Freq. (Hz) (Test Condition)":"9.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-257AB","I(DSS) Min. (A)":"25m","Military":"N","td(on) Max ...

"Low Power, Switching, High Frecvency, 2N708-46, Silicon, NPN, 500mW, 40V, 15V, 5V, 200mA, 200°C, 300MHz, 6, 30\/120, STE, TO46"...

"Low Power, Switching, High Frecvency, 2N708-51, Silicon, NPN, 500mW, 40V, 15V, 5V, 200mA, 200°C, 300MHz, 6, 30\/120, STE, TO51"...

{"C(iss) Max. (F)":"40p","Absolute Max. Power Diss. (W)":"60","I(D) Abs. Max.(A) Drain Curr.":"6.7","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"50","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"6.7","@Freq. (Hz) (Test Condition)":"10M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-257AB","I(DSS) Min. (A)":"25m","Military":"N","td(on) Max ...

{"V(CE)sat Max.(V)":".15","Absolute Max. Power Diss. (W)":"360m","V(BR)CBO (V)":"50","h(FE) Min. Static Current Gain":"40","h(FE) Max. Current gain.":"120","@Freq. (Hz) (Test Condition)":"100M","@V(CE) (V) (Test Condition)":"10","I(CBO) Max. (A)":"10n","@V(CBO) (V) (Test Condition)":"20","Package":"TO-18","h(fe) Min. SS Current gain.":"3.0","@I(B) (A) (Test Condition)":"1.0m","V(BR)CEO (V)":"20","Military":"N","@I(C) (A) (Test Condition)":"10m","C(obo) (Max) (F)":"6.0p"}...