{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"20 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"140 MHz","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Number...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"20 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"140 MHz","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Config...

{"Absolute Max. Power Diss. (W)":"25","I(D) Abs. Max.(A) Drain Curr.":"3.5","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"22","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.5","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","Military":"Y","Mil Number":"JANH2N7262","td(on) Max (s) On time delay":"30n","I(DSS...

{"Absolute Max. Power Diss. (W)":"25","I(D) Abs. Max.(A) Drain Curr.":"3.5","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"22","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.5","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","Military":"Y","Mil Number":"JANSH2N7262","td(on) Max (s) On time delay":"30n","I(DS...

{"Absolute Max. Power Diss. (W)":"25","I(D) Abs. Max.(A) Drain Curr.":"3.5","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"22","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.5","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","Military":"Y","Mil Number":"JANTXH2N7262","td(on) Max (s) On time delay":"30n","I(D...

{"Absolute Max. Power Diss. (W)":"25","I(D) Abs. Max.(A) Drain Curr.":"3.5","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"22","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.5","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","Military":"Y","Mil Number":"JANTXVH2N7262","td(on) Max (s) On time delay":"30n","I(...

{"Absolute Max. Power Diss. (W)":"25","I(D) Abs. Max.(A) Drain Curr.":"5","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"32","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"5","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","Military":"Y","Mil Number":"R2N7261+JAN","td(on) Max (s) On time delay":"30n","I(DSS) M...

{"Absolute Max. Power Diss. (W)":"25","I(D) Abs. Max.(A) Drain Curr.":"5","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"32","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"5","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","Military":"Y","Mil Number":"R2N7261+JANS","td(on) Max (s) On time delay":"30n","I(DSS) ...

{"Absolute Max. Power Diss. (W)":"25","I(D) Abs. Max.(A) Drain Curr.":"5","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"32","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"5","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","Military":"Y","Mil Number":"R2N7261+JANTX","td(on) Max (s) On time delay":"30n","I(DSS)...

{"Absolute Max. Power Diss. (W)":"25","I(D) Abs. Max.(A) Drain Curr.":"5","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"32","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"5","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","Military":"Y","Mil Number":"R2N7261+JANTXV","td(on) Max (s) On time delay":"30n","I(DSS...

{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"21","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"170n","r(DS)on Max. (Ohms)":"70m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"136","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"21","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7268+JAN","td(on) Max (s) On time delay":"45n","I(DSS)...

{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"21","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"170n","r(DS)on Max. (Ohms)":"70m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"136","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"21","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7268+JANS","td(on) Max (s) On time delay":"45n","I(DSS...

{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"21","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"170n","r(DS)on Max. (Ohms)":"70m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"136","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"21","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7268+JANTX","td(on) Max (s) On time delay":"45n","I(DS...

{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"21","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"170n","r(DS)on Max. (Ohms)":"70m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"136","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"21","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7268+JANTXV","td(on) Max (s) On time delay":"45n","I(D...

{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"115m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7269+JAN","td(on) Max (s) On time delay":"33n","I(DSS...

{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"115m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7269+JANS","td(on) Max (s) On time delay":"33n","I(DS...

{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"115m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7269+JANTX","td(on) Max (s) On time delay":"33n","I(D...

{"Absolute Max. Power Diss. (W)":"150","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"115m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-254AA","Military":"Y","Mil Number":"R2N7269+JANTXV","td(on) Max (s) On time delay":"33n","I(...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"32 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"130 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Absolute Max. Power Diss. (W)":"800m","I(D) Abs. Max.(A) Drain Curr.":"3.5","@V(GS) (V) (Test Condition)":"12","r(DS)on Max. (Ohms)":"400m","I(DM) Max (A)(@25°C)":"22","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.0m","V(GS)th Max. (V)":"4.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"2.0","Package":"TO-205AF","Military":"N","I(DSS) Max. (A)":"25u","V(BR)DSS (V)":"200","@Temp (°C) (Test Condition)":"100","I(D) Abs. Drain Current (A)":"5.5"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Trans...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0760 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0760 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technol...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"34 A","Mounting":"Through Hole","Drain-Source On-Volt":"100 V","Pin Count":"3 +Tab","Power Dissipation":"150 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-254AA","Rad Hardened":"Yes","Type":"Power MOSFET","Drain-Source On-Res":"0.076 ohm","Number of Elements":"1"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0760 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0760 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technol...

{"C(iss) Max. (F)":"4.7n","Absolute Max. Power Diss. (W)":"150","V(BR)DSS (V)":"200","I(D) Abs. Max.(A) Drain Curr.":"16","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"100m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"16","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-25...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1050 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1050 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...

{"Absolute Max. Power Diss. (W)":"25","I(D) Abs. Max.(A) Drain Curr.":"3.5","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"15","I(DM) Max (A)(@25°C)":"22","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.5","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","Military":"N","td(on) Max (s) On time delay":"30n","I(DSS) Max. (A)":"25u","@(VDS) ...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"240 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"240 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown V...

{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200(Min) V","Typical Turn-Off Delay Time":"140(Max) ns","Description":"Value","Maximum Continuous Drain Current":"26 A","Package":"3SMD-1","Mounting":"Surface Mount","Dose Level":"300 krad","Typical Turn-On Delay Time":"33(Max) ns","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"0.11@12V Ohm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...