{"C(iss) Max. (F)":"800p","Absolute Max. Power Diss. (W)":"100","g(fs) Max, (S) Trans. conduct,":"1.7","r(DS)on Max. (Ohms)":"1.75","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"1.0u","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"4.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-247var","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"35n","V(BR)DSS (V)":"450","t(f) Max. (s) Fall time.":"35n","g(fs) Min. (S) Trans. conduct.":"1.2","I(D) Abs. Drain Current (A)":"8.0"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","T...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEM...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.5(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"250(V)","Packaging":"Tape and Reel","Power Dissipation":"1.25(W)","Operating Temp Range":"-55C to 150C","Package Type":"SC-96","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2 W","Avalanche Energy Rating (Eas)":"21 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICO...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"40.5 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...

{"Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"322 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Trans...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"2-5N1A, 4 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLATPACK","Drain Current-Max (ID)":"3 A","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"RF ...

{"Factory Pack Quantity":"3000","Product Category":"RF MOSFET Transistors","Transistor Polarity":"N-Channel","Technology":"Si","Brand":"Toshiba","Id - Continuous Drain Current":"3 A","Vgs th - Gate-Source Threshold Voltage":"1 V","Mounting Style":"SMD\/SMT","Packaging":"Reel","Frequency":"470 MHz","Gain":"11.5 dB","Pd - Power Dissipation":"20 W","Package \/ Case":"PW-X-4","Type":"RF Power MOSFET","RoHS":"Details","Manufacturer":"Toshiba"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Package \/ Case":"SC-97","Supplier Device Package":"TFP (9.2x10.7)","Datasheets":"2SK4034 Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"5.8 mOhm @ 38A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"125W","Standard Package":"1,500","Drain to Source Voltage (Vdss)":"60V","Current - Continuous Drain...

{"Category":"Discrete Semiconductor Products","Transistor Type":"N-Channel","Product Photos":"2SK4037(TE12L,Q)","Family":"RF FETs","Series":"-","Noise Figure":"-","Package \/ Case":"SC-70, SOT-323","Supplier Device Package":"SC-70","Voltage - Test":"6V","Packaging":"Tape & Reel (TR)","Datasheets":"2SK4037 -","Frequency":"470MHz","Gain":"11.5dB","Standard Package":"1,000","Current - Test":"250mA","Current Rating":"3A","Voltage - Rated":"12V","Power - Output":"36.5dBmW","Other Names":"2SK4037(TE12LQ)TR 2SK403...