{"@I(C) (A) (Test Condition)":"100m","Absolute Max. Power Diss. (W)":"250m","V(CE)sat Max.(V)":"1.0","I(CBO) Max. (A)":"100n","I(C) Abs.(A) Collector Current":"300m","Semiconductor Material":"Silicon","h(FE) Min. Static Current Gain":"20k","@V(CE) (V) (Test Condition)":"5","@I(B) (A) (Test Condition)":".1","V(BR)CEO (V)":"30","@V(CBO) (V) (Test Condition)":"30","Military":"N","V(BR)CBO (V)":"40","Package":"SOT-23","f(T) Min. (Hz) Transition Freq":"220M"}...