Diodes.com/BSS138W-13
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"50 V","Transistor Application":"SWITCHIN...
1455 Bytes - 09:26:32, 30 April 2024
Diodes.com/BSS138W-7
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT-323","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"50pF @ 10V","Series":"-","Standard Package":"1","Supplier Device Package":"SOT-323","Datasheets":"BSS138W Datasheet","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 220mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"200mW","Package \/ Case":"SC-70, SOT-323","Mounting Typ...
1561 Bytes - 09:26:32, 30 April 2024
Diodes.com/BSS138W-7-F
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Other Drawings":"SOT-323 Package Top SOT-323 Package Side 1 SOT-323 Package Side 2","Package \/ Case":"SC-70, SOT-323","Gate Charge (Qg) @ Vgs":"-","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 220mA, 10V","Product Photos":"SOT-323","PCN Design\/Specification":"Bond Wire 16\/Sept\/2008","PCN Other":"Multiple Device Changes 29\/Apr\/2013","Datasheets":"BSS138W Datasheet","FET Type":"MOSFET N-Channel...
1958 Bytes - 09:26:32, 30 April 2024
Diodes.com/BSS138W-7-F/BKN
{"Category":"MOSFET","Maximum Drain Source Voltage":"50 V","Description":"Value","Maximum Continuous Drain Current":"0.2 A","Package":"3SOT-323","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"20(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"3500@10V mOhm","Manufacturer":"Diodes, Inc"}...
1311 Bytes - 09:26:32, 30 April 2024
Diodes.com/BSS138W-7-F
{"Polarity":"N","Continuous Drain Current":"0.2(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Small Signal","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOT-323","Drain-Source On-Res":"3.5(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"3","Channel Mode":"Enhancement","...
1700 Bytes - 09:26:32, 30 April 2024
Fairchildsemi.com/BSS138W
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1.5V @ 1mA","Package \/ Case":"SC-70, SOT-323","Current - Continuous Drain (Id) @ 25\u00b0C":"210mA (Ta)","Gate Charge (Qg) @ Vgs":"1.1nC @ 10V","Product Photos":"SC70, SOT\u2212323, 419\u221204","PCN Assembly\/Origin":"Qualification of Manufacturing Source 25\/Nov\/2013","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 220mA, 10V","Datasheets":"BSS138W Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Binar...
1879 Bytes - 09:26:32, 30 April 2024
Fairchildsemi.com/BSS138W/BKN
{"Category":"MOSFET","Maximum Drain Source Voltage":"50 V","Typical Rise Time":"1.9 ns","Typical Turn-Off Delay Time":"6.7 ns","Description":"Value","Maximum Continuous Drain Current":"0.21 A","Package":"3SOT-323","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"2.3 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"3500@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"6.5 ns"}...
1411 Bytes - 09:26:32, 30 April 2024
Infineon.com/BSS138W
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.5000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Tec...
1587 Bytes - 09:26:32, 30 April 2024
Infineon.com/BSS138W E6327
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 220mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-323","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 26\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT323-3","Other Names":"BSS138WE6327INDKR","Packaging":"Digi-Reel\u00ae","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSS138W Series","Power - Max":"500mW","Package \/ Case":"SC-70, SOT-323","Mounting Ty...
1771 Bytes - 09:26:32, 30 April 2024
Infineon.com/BSS138W E6433
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 220mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-323","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 26\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"10,000","Supplier Device Package":"PG-SOT323-3","Other Names":"BSS138WE6433 SP000014284","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSS138W Series","Power - Max":"500mW","Package \/ Case":"SC-70, SOT-323"...
1778 Bytes - 09:26:32, 30 April 2024
Infineon.com/BSS138W H6327
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.5(W)","Continuous Drain Current":"0.28(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-323","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1538 Bytes - 09:26:32, 30 April 2024
Infineon.com/BSS138WH6327XT
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.28 A","Mounting":"Surface Mount","Drain-Source On-Volt":"60 V","Packaging":"Tape and Reel","Power Dissipation":"0.5 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-323","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1521 Bytes - 09:26:32, 30 April 2024
Infineon.com/BSS138WH6327XTSA1
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 26\u00b5A","Series":"SIPMOS\u00ae","Package \/ Case":"*","Supplier Device Package":"*","Datasheets":"BSS138W","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 200mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"500mW","Standard Package":"3,000","Input Capacitance (Ciss) @ Vds":"43pF @ 25V","Drain to Source Voltage (Vdss)":"60V","Current...
1659 Bytes - 09:26:32, 30 April 2024
Infineon.com/BSS138W H6433
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.28(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"0.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-323","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1539 Bytes - 09:26:32, 30 April 2024
Infineon.com/BSS138WH6433XTMA1
{"Factory Pack Quantity":"10000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"0.1 nC","Series":"BSS138","Brand":"Infineon Technologies","Id - Continuous Drain Current":"280 mA","Mounting Style":"SMD\/SMT","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"3.5 Ohms","Pd - Power Dissipation":"500 mW","Package \/ Case":"SOT-323-3","Part # Aliases":"SP000917558","RoHS":"Details","Manufacturer":"Infineon"}...
1576 Bytes - 09:26:32, 30 April 2024
Infineon.com/BSS138W L6327
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 220mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-323","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 26\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"3,000","Supplier Device Package":"PG-SOT323-3","Other Names":"SP000245411","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSS138W Series","Power - Max":"500mW","Package \/ Case":"SC-70, SOT-323","Mounting Typ...
1764 Bytes - 09:26:32, 30 April 2024
Infineon.com/BSS138WL6327XT
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.28(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"3","Packaging":"Tape and Reel","Power Dissipation":"0.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-323","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"3.5(ohm)","Number of Elements":"1"}...
1574 Bytes - 09:26:32, 30 April 2024
Infineon.com/BSS138W L6433
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"3.5 Ohm @ 220mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-323","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.4V @ 26\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"10,000","Supplier Device Package":"PG-SOT323-3","Other Names":"SP000245412","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSS138W Series","Power - Max":"500mW","Package \/ Case":"SC-70, SOT-323","Mounting Ty...
1765 Bytes - 09:26:32, 30 April 2024
Mccsemi.com/BSS138W-TP
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.22(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Power Dissipation":"0.3(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-323","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1464 Bytes - 09:26:32, 30 April 2024
Onsemi.com/BSS138W
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.21(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Packaging":"Tape and Reel","Power Dissipation":"0.34(W)","Operating Temp Range":"-55C to 150C","Package Type":"SC-70","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1454 Bytes - 09:26:32, 30 April 2024
Panjit.com.tw/BSS138W
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"50 V","Transistor Application":"SWITCHIN...
1449 Bytes - 09:26:32, 30 April 2024
Panjit.com.tw/BSS138WT/R13
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"50 V","Transistor Application":"SWITCHIN...
1484 Bytes - 09:26:32, 30 April 2024
Panjit.com.tw/BSS138WT/R7
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"50 V","Transistor Application":"SWITCHIN...
1478 Bytes - 09:26:32, 30 April 2024