{"C(iss) Max. (F)":"650p","Absolute Max. Power Diss. (W)":"79","@Pulse Width (s) (Condition)":"10u","g(fs) Max, (S) Trans. conduct,":"7.1","I(D) Abs. Max.(A) Drain Curr.":"10","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"33n","r(DS)on Max. (Ohms)":"160m","@V(DS) (V) (Test Condition)":"0.0","I(DM) Max (A)(@25°C)":"56","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"4.7","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.3","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max...

{"C(iss) Max. (F)":"650p","Absolute Max. Power Diss. (W)":"79","@Pulse Width (s) (Condition)":"10u","g(fs) Max, (S) Trans. conduct,":"7.1","I(D) Abs. Max.(A) Drain Curr.":"10","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"33n","r(DS)on Max. (Ohms)":"160m","@V(DS) (V) (Test Condition)":"0.0","I(DM) Max (A)(@25°C)":"56","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"4.7","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.3","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max...

{"C(iss) Max. (F)":"960p","Absolute Max. Power Diss. (W)":"75","I(GSS) Max. (A)":"500n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"20","V(BR)DSS (V)":"100","g(fs) Min. (S) Trans. conduct.":"3.9","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"7.0","I(D) Abs. Drain Current (A)":"14","Package":"TO-220(5)","r(DS)on Max. (Ohms)":"180m"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Current Sensing","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-220-5","Supplier Device Package":"TO-220-5","Datasheets":"IRC530PBF","Rds On (Max) @ Id, Vgs":"160 mOhm @ 8.4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"88W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"700pF @ 25V","Drain to Source Voltage (Vdss)":"...