{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"72 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"216 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"18 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Ty...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Through Hole","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"150(W)","Rad Hardened":"No","Package Type":"TO-220AB","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-262","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220AB PKG","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1160pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF640N","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"150W","Package \/ Case":"TO-220-3","Mounting Type":"Through Hole"...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Through Hole","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-262-3 Long Leads","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1160pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-262","Datasheets":"IRF640N","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"150W","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"HEXFET TO-262-3 Long Leads","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, 10V","Datasheets":"IRF640N(S,L)PbF","FET Type":"MOSFET N-Channel, Metal Oxi...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"TO-220AB PKG","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, 10V","Datasheets":"IRF640N(S,L)PbF","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Package Drawing Update 19\...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"247 mJ","Package Shape":"RECTANGULAR","Status":"EOL\/LIFEBUY","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"Alternate Assembly Site 11\/Nov\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, 10V","Datasheets":"IRF640N(...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"247 mJ","Package Shape":"RECTANGULAR","Status":"EOL\/LIFEBUY","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"200(V)","Frequency (Max)":"Not Required MHz","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power Gain "...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"Alternate Assembly Site 11\/Nov\/2013 Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"247 mJ","Package Shape":"RECTANGULAR","Status":"EOL\/LIFEBUY","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"Alternate Assembly Site 11\/Nov\/2013 Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3, TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Input Capacitance (Ciss) @ Vds":"1850pF @ 25V","Series":"TrenchMOS\u2122","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF640, IRF640S","Rds On (Max) @ Id, Vgs":"180 mOhm @ 8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"136W","Package \/ Case":"TO-220-3","Mounting Type":"Thro...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3, TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1560pF @ 25V","Series":"MESH OVERLAY\u2122","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF640(FP)","Rds On (Max) @ Id, Vgs":"180 mOhm @ 9A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"125W","Package \/ Case":"TO-220-3","Mounting Type":...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220FP","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"MESH OVERLAY\u2122","Standard Package":"1,000","Supplier Device Package":"TO-220FP","Datasheets":"IRF640(FP)","Rds On (Max) @ Id, Vgs":"180 mOhm @ 9A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"40W","Package \/ Case":"TO-220-3 Full Pack","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)...

{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"1.6n","t(r) Max. (s) Rise time":"60n","I(GSS) Max. (A)":"500n","I(DSS) Min. (A)":"250u","V(BR)DSS (V)":"200","t(f) Max. (s) Fall time.":"60n","g(fs) Min. (S) Trans. conduct.":"6.0","I(D) Abs. Drain Current (A)":"20","Package":"TO-220AB","Military":"N","r(DS)on Max. (Ohms)":"144m"}...

{"C(iss) Max. (F)":"1.3n","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"10","I(D) Abs. Max.(A) Drain Curr.":"11","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"68n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"72","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"6.7","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"10","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packag...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"72 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"18 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Packag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"ME...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"ME...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"ME...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"580 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...