{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"6 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"114 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"2 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type...

{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"6 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"100 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"2 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.4(W)","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"50(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b112(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"20(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Packaging":"Rail\/Tube","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Power Dissipation":"2.4(W)","Operating Temp Range":"-55C to 175C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2(W)","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b112(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"2.3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"20(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Polarity":"N\/P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2(W)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"25(V)","Packaging":"Rail\/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Polarity":"N\/P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"25(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"130 mOhm @ 3A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Packaging":"Tube","FET Type":"2 N-Channel (Dual)","Datasheets":"AUIRF7103Q","Power - Max":"2.4W","Standard P...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Arrays","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF7103Q","Rds On (Max) @ Id, Vgs":"130 mOhm @ 3A, 10V","FET Type":"2 N-Channel (Dual)","Packaging":"Tape & Reel (TR)","Power - Max":"2.4W","Stan...

{"Status":"EOL\/LIFEBUY","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.4 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3.5 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"2","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package S...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"3.5A","Gate Charge (Qg) @ Vgs":"15nC @ 10V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"100 mOhm @ 1.8A, 10V","...

{"Status":"EOL\/LIFEBUY","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.4 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3.5 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"2","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package S...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"3.5A","Gate Charge (Qg) @ Vgs":"15nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"100 mOhm @ 1.8A, 10V","Datasheets":"IRF7101PbF","FET Type":"2 N-Channel (Dual)","...

{"Polarity":"N","Continuous Drain Current":"3 A","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Product Category":"MOSFET","Gate-Source Voltage (Max)":"\ufffd20 V","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOIC","Drain-Source On-Res":"0.13 ohm","Manufacturer":"INTERNATIONAL RECTIFIER","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"3A","Gate Charge (Qg) @ Vgs":"30nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"130 mOhm @ 3A, 10V","Datasheets":"IRF7103PbF","FET Type":"2 N-Channel (Dual)","PCN Packaging":"Package Drawing Update 19\/Aug\/2...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF7103Q Saber Model IRF7103Q Spice Model","Product Photos":"8-SOIC","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"95","Supplier Device Package":"8-SO","Datasheets":"IRF7103Q","Rds On (Max) @ Id, Vgs":"130 mOhm @ 3A, 10V","FET Type":"2 N-Channel (Dual)","Packaging":"Tube","Power - Max":"2.4W","Other Names":"*IRF7103Q","Package \/ Case":"8-SOIC (0.154\", 3.9...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.4(W)","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"50(V)","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"50(V)","Power Dissipation":"2.4(W)","Operating Temp Range":"-55C to 175C","Package Type":"SOIC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN OVER NICKEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"LEAD FREE, SOP-8","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Transistor Application":"SWITCHING","Number of Elements":"2","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN D...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF7103Q Saber Model IRF7103Q Spice Model","Product Photos":"8-SOIC","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"1","Supplier Device Package":"8-SO","Datasheets":"IRF7103QPbF","Rds On (Max) @ Id, Vgs":"130 mOhm @ 3A, 10V","FET Type":"2 N-Channel (Dual)","Packaging":"Digi-Reel\u00ae","Power - Max":"2.4W","Other Names":"IRF7103QTRPBFDKR","Package \/ Case":"...

{"Polarity":"N","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Gate-Source Voltage (Max)":"'\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOIC","Drain-Source On-Res":"0.13(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-55C to 150C","Pin Count":"8","Channel Mode":"Enhancement","Drai...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"3A","Gate Charge (Qg) @ Vgs":"30nC @ 10V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Rds On (Max) @ Id, Vgs":"130 mOhm @ 3A, 10V","Datasheets":"IRF7103PbF","FET Type":"2 N-Channel (Dual)","PCN Packaging":"Package Drawing Update 19\/Aug\/2015","Drain to Source Vo...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"2.3A","Gate Charge (Qg) @ Vgs":"25nC @ 10V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"250 mOhm @ 1A, 10V","Datasheets":"IRF7104PbF","FET Type":"2 ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"2.3A","Gate Charge (Qg) @ Vgs":"25nC @ 10V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"250 mOhm @ 1A, 10V","Datasheets":"IRF7104PbF","FET Type":"2 ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"3.5A, 2.3A","Gate Charge (Qg) @ Vgs":"27nC @ 10V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"100 mOhm @ 1A, 10V","Datasheets":"IRF7105PbF","FET Type":"N an...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Te...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"8-SOIC","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"330pF @ 15V","Series":"HEXFET\u00ae","Standard Package":"1","Supplier Device Package":"8-SO","Datasheets":"IRF7105QPbF","Rds On (Max) @ Id, Vgs":"100 mOhm @ 1A, 10V","FET Type":"N and P-Channel","Packaging":"Digi-Reel\u00ae","Power - Max":"2W","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Mounting Type":"Surfa...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"3.5A, 2.3A","Gate Charge (Qg) @ Vgs":"27nC @ 10V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"100 mOhm @ 1A, 10V","Datasheets":"IRF7105PbF","FET Type":"N an...

{"C(iss) Max. (F)":"135p","Absolute Max. Power Diss. (W)":"36","g(fs) Max, (S) Trans. conduct,":"1.5","I(D) Abs. Max.(A) Drain Curr.":"1.2","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"32n","r(DS)on Max. (Ohms)":"3.6","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"5","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.1","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packag...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"3.6 Ohm @ 1.2A, 10V","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Other Names":"*IRF710","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRF710PBF Packaging Information","Power - Max":"36W","Package \/ Case":"TO-220-3","Mounting Type":"Through Hole","Drain to So...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"5 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"2 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"3.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"120 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"3.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...