{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Rail\/Tube","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC N","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"10(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC N","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"370 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.04V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"4,000","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF7416Q","Rds On (Max) @ Id, Vgs":"20 mOhm @ 5.6A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W",...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Turn-Off Delay Time":"59 ns","Description":"Value","Maximum Continuous Drain Current":"10 A","Package":"8SO","Typical Turn-On Delay Time":"18 ns","Mounting":"Surface Mount","Typical Rise Time":"49 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"20@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"60 ns"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"370 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"10A (Ta)","Gate Charge (Qg) @ Vgs":"92nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"20 mOhm @ 5.6A, 10V","Datasheets":"IRF7416GPBF","FET Type":"MOSFET P-Channel, Metal O...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"10A (Ta)","Gate Charge (Qg) @ Vgs":"92nC @ 10V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Alternate Assembly Site 15\/Apr\/2014 Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"370 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"8-SOIC","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1700pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"1","Supplier Device Package":"8-SO","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF7416QPbF","Rds On (Max) @ Id, Vgs":"20 mOhm @ 5.6A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - M...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"10A (Ta)","Gate Charge (Qg) @ Vgs":"92nC @ 10V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"20 mOhm @ 5.6A, 10V","Datas...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Turn-Off Delay Time":"59 ns","Description":"Value","Maximum Continuous Drain Current":"10 A","Package":"8SOIC","Typical Turn-On Delay Time":"18 ns","Mounting":"Surface Mount","Typical Rise Time":"49 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"20@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"60 ns"}...