{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"110(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail\/Tube","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"110(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail\/Tube","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-247AC Pkg","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package \/ Case":"TO-247-3","Supplier Device Package":"TO-247AC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRFP064N","Rds On (Max) @ Id, Vgs":"8 mOhm @ 59A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"200W","Standard Package":...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Finish":"TIN NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXI...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"110A (Tc)","Gate Charge (Qg) @ Vgs":"170nC @ 10V","Product Photos":"TO-247AC Pkg","PCN Design\/Specification":"Alternative Leadframe and Die Attach 11\/Jun\/2013 Pb\/Sn\/Ag Material Update 09\/Feb\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"8 mOhm @ 59A, ...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"100 ns","Typical Turn-Off Delay Time":"43 ns","Description":"Value","Maximum Continuous Drain Current":"110 A","Package":"3TO-247AC","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"14 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"8@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"70 ns"}...