{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.2V @ 8\u00b5A","Input Capacitance (Ciss) @ Vds":"1220pF @ 25V","Series":"OptiMOS\u2122","Package \/ Case":"*","Supplier Device Package":"*","Datasheets":"IPD25N06S4L-30","Rds On (Max) @ Id, Vgs":"30 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"29W","Standard Package":"1","PCN Packaging":"Cover Tape Width Updat...

{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"12 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"25 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"92 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Tr...