Anpec.com.tw/APM2320AC-TRG
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","...
1489 Bytes - 03:21:16, 04 May 2024
Anpec.com.tw/APM2321AA
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"GREEN PACKAGE-3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.0013 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","...
1414 Bytes - 03:21:16, 04 May 2024
Anpec.com.tw/APM2322AACCTRG
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0017 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1600 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V...
1490 Bytes - 03:21:16, 04 May 2024
Anpec.com.tw/APM2322AACCTRL
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0017 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1600 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V...
1488 Bytes - 03:21:16, 04 May 2024
Anpec.com.tw/APM2323AACCTRG
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0025 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1200 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V...
1490 Bytes - 03:21:16, 04 May 2024
Anpec.com.tw/APM2323AACCTRL
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0025 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1200 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V...
1490 Bytes - 03:21:16, 04 May 2024
Anpec.com.tw/APM2324AACCTRG
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0030 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V...
1486 Bytes - 03:21:16, 04 May 2024
Anpec.com.tw/APM2324AACCTRL
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0030 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V...
1485 Bytes - 03:21:16, 04 May 2024
Conwin.com/PM232-098.00M
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Mounting Feature":"SURFACE MOUNT","Mfr Package Description":"ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-6","Operating Temperature-Min":"-40 Cel","Frequency Adjustment-Mechanical":"0","Physical Dimension":"L7.0XB5.0XH1.75 (mm)\/L0.276XB0.197XH0.069 (inch)","Operating Frequency-Nom":"98 MHz","Rise Time-Max":"0.6000 ns","Operating Temperature-Max":"85 Cel","Oscillator Type":"LVPECL","Symmetry-Max":"1.22 %","Supply Voltage-Max":"2.62 ...
1430 Bytes - 03:21:16, 04 May 2024
Conwin.com/PM232-155.52M
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Mounting Feature":"SURFACE MOUNT","Mfr Package Description":"ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-6","Operating Temperature-Min":"-40 Cel","Frequency Adjustment-Mechanical":"0","Physical Dimension":"L7.0XB5.0XH1.75 (mm)\/L0.276XB0.197XH0.069 (inch)","Operating Frequency-Nom":"156 MHz","Rise Time-Max":"0.6000 ns","Operating Temperature-Max":"85 Cel","Oscillator Type":"LVPECL","Symmetry-Max":"1.22 %","Supply Voltage-Max":"2.62...
1435 Bytes - 03:21:16, 04 May 2024
Conwin.com/PM232-670.00M
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Mounting Feature":"SURFACE MOUNT","Mfr Package Description":"ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-6","Operating Temperature-Min":"-40 Cel","Frequency Adjustment-Mechanical":"0","Physical Dimension":"L7.0XB5.0XH1.75 (mm)\/L0.276XB0.197XH0.069 (inch)","Operating Frequency-Nom":"670 MHz","Rise Time-Max":"0.6000 ns","Operating Temperature-Max":"85 Cel","Oscillator Type":"LVPECL","Symmetry-Max":"1.22 %","Supply Voltage-Max":"2.62...
1432 Bytes - 03:21:16, 04 May 2024
Conwin.com/PM232-FREQ
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Mounting Feature":"SURFACE MOUNT","Mfr Package Description":"ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-6","Operating Temperature-Min":"-40 Cel","Frequency Adjustment-Mechanical":"0","Physical Dimension":"L7.0XB5.0XH1.75 (mm)\/L0.276XB0.197XH0.069 (inch)","Rise Time-Max":"0.6000 ns","Operating Temperature-Max":"85 Cel","Oscillator Type":"LVPECL","Operating Frequency-Min":"98 MHz","Supply Voltage-Max":"2.62 V","Manufacturer Series"...
1458 Bytes - 03:21:16, 04 May 2024
Toshiba.co.jp/TPM2323-14
{"@V(DS) (V) (Test Condition)":"3.0","V(GS)off Max. (V)":"1.0","Power Gain Min. (dB)":"11","Semiconductor Material":"GaAs","I(DSS) Max. (A)":"13","Package":"FO-91var","V(BR)DSS (V)":"15","P(D) Max.(W) Power Dissipation":"60","@Temp (°C) (Test Condition)":"25","I(D) Abs. Drain Current (A)":"13","@Freq. (Hz) (Test Condition)":"2.3G","V(BR)GSS (V)":"5.0"}...
839 Bytes - 03:21:16, 04 May 2024
Toshiba.co.jp/TPM2323-30
{"@V(DS) (V) (Test Condition)":"3.0","V(GS)off Max. (V)":"1.0","Power Gain Min. (dB)":"10.5","Semiconductor Material":"GaAs","I(DSS) Max. (A)":"26","Package":"FO-231var","V(BR)DSS (V)":"15","P(D) Max.(W) Power Dissipation":"100","@Temp (°C) (Test Condition)":"25","I(D) Abs. Drain Current (A)":"26","@Freq. (Hz) (Test Condition)":"2.3G","V(BR)GSS (V)":"5.0"}...
843 Bytes - 03:21:16, 04 May 2024
Toshiba.co.jp/TPM2323-60
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, 2-16G1B, 2 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"26 A","Transistor Element Material":"GALLIUM ARSENIDE","Highest Frequency Band":"S BAND","Number of Elements":"1","Case Connection":"SOURCE","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"...
1424 Bytes - 03:21:16, 04 May 2024