{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 900\u00b5A","Featured Product":"2nd Generation High-Voltage SiC MOSFETs 1200 V Silicon Carbide (SiC) Diodes","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"10A (Tc)","Gate Charge (Qg) @ Vgs":"27nC @ 18V","Product Photos":"TO-247","Rds On (Max) @ Id, Vgs":"585 mOhm @ 3A, 18V","Datasheets":"SCT2450KE","FET Type":"SiCFET N-Channel, Silicon Carbide","Standard Package":"360","Drain to So...