Product Datasheet Search Results:
- 2SK2009(F)
- Toshiba
- Trans MOSFET N-CH 30V 0.2A 3-Pin S-Mini
- 2SK2009(TE85L,F)
- Toshiba
- Trans MOSFET N-CH 30V 0.2A 3-Pin S-Mini T/R
- 2SK2009TE85LF
- Toshiba
- RF MOSFET Transistors N-Ch Sm Sig FET Id 0.2A 30V 20V
Product Details Search Results:
Toshiba.co.jp/2SK2009
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR","Drain-source On Resistance-Max":"2 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":...
1515 Bytes - 00:17:13, 24 December 2025
Toshiba.co.jp/2SK2009(F)
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2 A","Mounting":"Surface Mount","Drain-Source On-Volt":"30 V","Pin Count":"3","Power Dissipation":"0.2 W","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"2 ohm","Number of Elements":"1"}...
1441 Bytes - 00:17:13, 24 December 2025
Toshiba.co.jp/2SK2009(TE85L,F)
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.2 A","Mounting":"Surface Mount","Drain-Source On-Volt":"30 V","Packaging":"Tape and Reel","Power Dissipation":"0.2 W","Operating Temp Range":"-55C to 150C","Package Type":"SMini","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1474 Bytes - 00:17:13, 24 December 2025
Toshiba.co.jp/2SK2009TE85LF
{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"30 V","Transistor Polarity":"N-Channel","Minimum Operating Temperature":"- 55 C","Mounting Style":"SMD/SMT","Technology":"Si","Brand":"Toshiba","Pd - Power Dissipation":"200 mW","Vgs th - Gate-Source Threshold Voltage":"1.5 V","Packaging":"Reel","Product Category":"RF MOSFET Transistors","Rds On - Drain-Source Resistance":"1.2 Ohms","Package / Case":"SOT-346","Id - Continuous Drain Current":"200 mA","Vgs - Gate-Source Breakdown Voltage"...
1784 Bytes - 00:17:13, 24 December 2025
Toshiba.semicon-storage.com/2SK2009TE85LF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.5V @ 100\u00b5A","Input Capacitance (Ciss) @ Vds":"70pF @ 3V","Series":"-","Standard Package":"3,000","Supplier Device Package":"SC-59-3","Datasheets":"2SK2009 -","Rds On (Max) @ Id, Vgs":"2 Ohm @ 50MA, 2.5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"200mW","Package...
1870 Bytes - 00:17:13, 24 December 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2009.pdf | 0.27 | 1 | Request |








