{"Category":"Power MOSFET","Dimensions":"5 x 4 x 1.55 mm","Maximum Continuous Drain Current":"11 A","Width":"4 mm","Maximum Drain Source Voltage":"30 V","Package Type":"SO-8","Number of Elements per Chip":"1","Configuration":"Quad Drain, Triple Source","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"16.3 nC @ 15 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"14 ns","Channel Type":"N","Length":"5 mm","Pin Count":"8","Forward Transconductance":...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.6V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"11A (Ta)","Gate Charge (Qg) @ Vgs":"24nC @ 5V","Product Photos":"8-SOIC","PCN Assembly\/Origin":"Multiple Fabracation Changes09\/Jul\/2014","Rds On (Max) @ Id, Vgs":"7 mOhm @ 16A, 10V","Datasheets":"SI4888DY","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Vo...