{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"130 mOhm @ 13.5A, 10V","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"SIPMOS\u00ae","Standard Package":"500","Supplier Device Package":"PG-TO220-3","Other Names":"BUZ30AIN BUZ30AX BUZ30AXK BUZ30AXTIN BUZ30AXTIN-ND SP000011336","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BUZ30A","Power - Max":"125W","Package \/ Case":"TO-220-3","Mount...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"130 mOhm @ 13.5A, 10V","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-TO263-3","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Input Capacitance (Ciss) @ Vds":"1900pF @ 25V","Power - Max":"125W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting...

{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Input Capacitance (Ciss) @ Vds":"1900pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"500","Supplier Device Package":"PG-TO220-3","Datasheets":"BUZ 30A H","Rds On (Max) @ Id, Vgs":"130 mOhm @ 13.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"125W","Package \/ Case":"T...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"ME...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Input Capacitance (Ciss) @ Vds":"1900pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-TO263-3","Datasheets":"BUZ30A H3045A","Rds On (Max) @ Id, Vgs":"130 mOhm @ 13.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"125W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + T...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"450 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL...

{"Product Category":"MOSFET","Series":"BUZ30","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"21 A","Mounting":"Through Hole","Drain-Source On-Volt":"200 V","Power Dissipation":"125 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Product Category":"MOSFET","Series":"BUZ30","Brand":"Infineon Technologies","Packaging":"Tube","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...

{"Factory Pack Quantity":"1000","Vds - Drain-Source Breakdown Voltage":"200 V","Transistor Polarity":"N-Channel","Package \/ Case":"D2PAK-3","Part # Aliases":"BUZ30AL3045AXT","Fall Time":"90 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Id - Continuous Drain Current":"21 A","Rds On - Drain-Source Resistance":"130 mOhms","RoHS":"Detail...

{"@V(DS) (V) (Test Condition)":"25","Status":"Discontinued","Absolute Max. Power Diss. (W)":"44","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"1.0m","@(VDS) (V) (Test Condition)":"200","V(BR)DSS (V)":"200","g(fs) Min. (S) Trans. conduct.":"5.0","V(BR)GSS (V)":"200","@I(D) (A) (Test Condition)":"2.7","I(D) Abs. Drain Current (A)":"5.5","Package":"TO-220","C(iss) Max. (F)":"1.5n","Military":"N","r(DS)on Max. (Ohms)":"750m"}...

{"C(iss) Max. (F)":"2.1n","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"1.5","r(DS)on Max. (Ohms)":"4.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","@I(D) (A) (Test Condition)":"1.6","Package":"TO-218","I(DSS) Min. (A)":"250u","Military":"N","t(r) Max. (s) Rise time":"60n","V(BR)DSS (V)":"1.0k","t(f) Max. (s) Fall time.":"80n","g(fs) Min. (S) Trans. conduct.":"700m","I(D) Abs. Drain Current (A)":"2.8"}...